Interconnect Innovations In High Bandwidth Memory: Part 2

Interconnect Innovations In High Bandwidth Memory: Part 2

Interconnect technology in high bandwidth memory (HBM) is at a fork in the road, with two possible directions: microbump technology and hybrid bonding.

Both technologies are evolving to address the requirements of next-generation HBM, including increased I/O density, higher bandwidth, and improved performance.

As data rates rise, there is a need for increased output contact pad density, which is driving innovation in bump technologies beyond their previously thought physical and performance limits.

Some memory designers are achieving bump sizes below 10µm in high-volume manufacturing.

Authors: Damon Tsai, Woo Young Han, and Tim Kryman.

Summary: Innovations in interconnect technology for high bandwidth memory.

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Semiconductor Engineering Semiconductor Engineering — 2025-10-14